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RF2310PCBA 数据手册 ( 数据表 ) - RF Micro Devices

RF2310 image

零件编号
RF2310PCBA

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page
10 Pages

File Size
188.1 kB

生产厂家
RFMD
RF Micro Devices RFMD

Product Description
The RF2310 is a general purpose, low-cost, high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 2500MHz. The gain flatness over a very wide bandwidth makes the device suitable for many applications.


FEATUREs
• DC to well over 2500MHz Operation
• Internally Matched Input and Output
• 15dB Small Signal Gain
• 5dB Noise Figure
• +19dBm Output Power
• Single 3.5V to 6V Positive Power Supply

Typical Applications
• General Purpose High Bandwidth Gain Blocks
• IF or RF Buffer Amplifiers
• Broadband Test Equipment
• Final PA for Medium Power Applications
• Driver Stage for Power Amplifiers

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零件编号
产品描述 (功能)
PDF
生产厂家
General Purpose Amplifier
ON Semiconductor
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
General Purpose Amplifier ( Rev : 2016 )
ON Semiconductor
General Purpose Amplifier
ON Semiconductor
General Purpose Amplifier ( Rev : 2001 )
ON Semiconductor
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
GENERAL PURPOSE AMPLIFIER
RF Micro Devices

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