Product Description
The RF2335 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified. The RF2335 is available in a very small industry-standard SOT23 5-lead surface mount package, enabling compact designs which conserve board space

FEATUREs
• DC to 6000MHz Operation
• Internally matched Input and Output
• 12dB Small Signal Gain
• +33dBm Output IP3
• +17dBm Output Power
• Good Gain Flatness

Typical Applications
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• Broadband Test Equipment