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RF3809 数据手册 ( 数据表 ) - RF Micro Devices

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零件编号
RF3809

产品描述 (功能)

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22 Pages

File Size
801.1 kB

生产厂家
RFMD
RF Micro Devices RFMD

Product Description
The RF3809 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF3809 also provides excellent efficiency and thermal stability through the use of a thermally-enhanced surface-mount plastic-slug package. Ease of integration is accomplished through the incorporation of an optimized evaluation board design provided to achieve proper 50Ω operation. Various evaluation boards are available to address a broad range of wireless infrastructure applications: NMT 450MHz; GSM850MHz; GSM900MHz; DCS1800MHz; PCS1900MHz; and, UMTS2200MHz.


FEATUREs
■ High Output Power of 2.0W P1dB
■ High Linearity
■ High Power-Added Efficiency
■ Thermally-Enhanced Packaging
■ Broadband Platform Design Approach, 450MHz to 2500MHz


APPLICATIONs
■ GaAs Pre-Driver for Basestation Amplifiers
■ PA Stage for Commercial Wireless Infrastructure
■ Class AB Operation for NMT, GSM, DCS, PCS, and UMTS Transceiver Applications
■ 2nd/3rd Stage LNA for Wireless Infrastructure

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

零件编号
产品描述 (功能)
PDF
生产厂家
GaAs HBT PRE-DRIVER AMPLIFIER
RF Micro Devices
GaAs HBT PRE-DRIVER AMPLIFIER ( Rev : V2 )
RF Micro Devices
GaAs HBT PRE-DRIVER AMPLIFIER ( Rev : V3 )
RF Micro Devices
GaAs HBT PRE-DRIVER AMPLIFIER
RF Micro Devices
GaAs HBT PRE-DRIVER AMPLIFIER
RF Micro Devices
GaAs HBT PRE-DRIVER AMPLIFIER
RF Micro Devices
GaAs HBT PRE-DRIVER AMPLIFIER ( Rev : V2 )
RF Micro Devices
GaAs HBT PRE-DRIVER AMPLIFIER
RF Micro Devices
GaAs HBT PRE-DRIVER AMPLIFIER ( Rev : V2 )
RF Micro Devices
GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz
Hittite Microwave

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