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RF5125 数据手册 ( 数据表 ) - RF Micro Devices

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零件编号
RF5125

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12 Pages

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249.7 kB

生产厂家
RFMD
RF Micro Devices RFMD

Product Description
The RF5125 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread spectrum transmitters. The device is provided in a 3mmx3mm, 16-pin, QFN with a backside ground. The RF5125 is designed to maintain linearity over a wide range of supply voltage and power output.


FEATUREs
◾ Single Power Supply 3.0V to 5.0V
◾ +21dBm, <4.0%EVM,185mA@VCC=3.3V
◾ 28dB Typical Small Signal Gain
◾ 50Ω Input and Interstage Matching
◾ 2400MHz to 2500MHz Frequency Range
◾ +23dBm, <4%EVM,250mA@VCC=5.0V


APPLICATIONs
◾ IEEE802.11b/g/n WLAN Applications
◾ 2.5GHz ISM Band Applications
◾ Commercial and Consumer Systems
◾ Portable Battery-Powered Equipment
◾ Spread-Spectrum and MMDS Systems

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