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RF5622(2007) 数据手册 ( 数据表 ) - RF Micro Devices

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零件编号
RF5622

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2 Pages

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75.6 kB

生产厂家
RFMD
RF Micro Devices RFMD

Product Description
The RF5622 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-spectrum transmitters. The device is provided in a 2mmx2mm, 8-pin, QFN with a backside ground. The RF5622 is designed to maintain linearity over a wide range of supply voltage and power output. The RF5622 also has built-in power detector and incorporates the input and interstage matching components internally which reduces the component count used externally and makes it easier to incorporate on any design.


FEATUREs
◾ Single Power Supply 3.0V to
   4.5V
◾ 30dB Typical Gain, Input
   Matched to 50Ω
◾ 2.4GHz to 2.5GHz Frequency
   Range
◾ 11g POUT=+18dBm@3% Typ
   EVM, 95mA


APPLICATIONs
◾ IEEE802.11b/g/n WLAN
   Applications
◾ 2.5GHz ISM Band Applications
◾ Commercial and Consumer
   Systems
◾ Portable Battery-Powered
   Equipment
◾ Spread-Spectrum and MMDS
   Systems


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