RJH60F5 数据手册 ( 数据表 ) - Renesas Electronics
零件编号
RJH60F5
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Renesas Electronics
Features
• Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
• Built in fast recovery diode in one package
• Trench gate and thin wafer technology
• High speed switching
tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load)
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