Features
•  Low collector to emitter saturation voltage
   VCE(sat)= 1.35 V typ. (at IC= 45 A, VGE= 15 V, Ta = 25°C)
•  Built in fast recovery diode in one package
•  Trench gate and thin wafer technology
•  High speed switching
   tf= 74 ns typ. (at IC= 30 A, VCE= 400 V, VGE= 15 V, Rg = 5 Ω, Ta = 25°C, inductive load)