Features
● Low collector to emitter saturation voltage
   VCE(sat) = 1.35 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
● Isolated package
● Trench gate and thin wafer technology (G7H series)
● High speed switching
● Operation frequency (50Hz ≤ f ˂ 20kHz)