RQG2001URAQF 数据手册 ( 数据表 ) - Renesas Electronics
零件编号
RQG2001URAQF
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27 Pages
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237.8 kB
生产厂家
Renesas Electronics
Features
• Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
• Low Distortion and Excellent Linearity
IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz
• High Transition Frequency
fT = 20 GHz typ.
• High Collector to Emitter Voltage
VCEO = 5 V
零件编号
产品描述 (功能)
PDF
生产厂家
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
Renesas Electronics
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
Renesas Electronics
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
Renesas Electronics
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