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S30D30CE 数据手册 ( 数据表 ) - Mospec Semiconductor

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零件编号
S30D30CE

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Mospec Semiconductor Mospec

SchottkyBarrier Rectifiers
  Using the SchottkyBarrier principle with a Molybdenum barrier metal.
These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideallysuited for lowvoltage, high frequencyrectification, or as free wheeling and polarityprotection diodes.

*LowForward Voltage.
*LowSwitching noise.
*High Current Capacity
*Guarantee Reverse Avalanche.
*Guard-Ring for Stress Protection.
*LowPower Loss & High efficiency.
*150℃ Operating Junction Temperature
*LowStored Charge MajorityCarrier Conduction.
*Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O

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SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 30 -- 60 VOLTS
Mospec Semiconductor
SCHOTTKY BARRIER RECTIFIERS 8 AMPERES 30 -- 60 VOLTS
Mospec Semiconductor
SCHOTTKY BARRIER RECTIFIERS 8 AMPERES 30-60 VOLTS
Mospec Semiconductor
SCHOTTKY BARRIER RECTIFIERS 50 AMPERES 30 -- 60 VOLTS
Mospec Semiconductor
SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 30-60 VOLTS
Mospec Semiconductor
SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 30-60 VOLTS
Mospec Semiconductor
SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 30 -- 60 VOLTS
Mospec Semiconductor
SCHOTTKY BARRIER RECTIFIERS 25 AMPERES 30 -- 60 VOLTS
Mospec Semiconductor
SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 30-60 VOLTS
Mospec Semiconductor
SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 30-60 VOLTS
Mospec Semiconductor

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