MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode

FEATUREs
• Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting.
• [MOSFET]
   • Low ON-resistance.
   • Ultrahigh-speed switching.
   • 1.8V drive.
• [SBD]
   • Short reverse recovery time.
   • Low forward voltage.