General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchilds advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charage for superior switching performance.

FEATUREs
• –4 A, –20 V. RDS(ON) = 0.065 Ω @ VGS = –4.5 V
                       RDS(ON) = 0.100 Ω @ VGS = –2.5 V
• Fast switching speed.
• Low gate charge (7.2 nC typical).
• High performance trench technology for extremely
    low RDS(ON).
• SuperSOT™-6 package: small footprint (72% smaller
    than standard SO-8); low profile (1mm thick)

APPLICATIONs
• Load switch
• Battery protection
• Power management