General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

FEATUREs
• –8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS = –10 V
                         RDS(ON) = 35 mΩ @ VGS = –4.5 V
• Low gate charge (17nC typical)
• Fast switching speed
• High performance trench technology for extremely
   low RDS(ON)
• High power and current handling capability

APPLICATIONs
• Power management
• Load switch
• Battery protection