生产厂家
Sanken Electric co.,ltd.
Features
• V(BR)DSS --------------------------------- 60 V (ID = 100 µA)
• ID ----------------------------------------------------------85 A
• RDS(ON) ----------4.9 mΩ max. (VGS = 10 V, ID = 55.0 A)
• Qg------44.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 55.0 A)
• Low Total Gate Charge
• High Speed Switching
• Low On-Resistance
• Capable of 4.5 V Gate Drive
• 100 % UIL Tested
• RoHS Compliant
APPLICATIONs
• DC-DC converters
• Synchronous Rectification
60 V, 85 A, 3.9 mΩ Low RDS(ON) N ch Trench Power MOSFET
Sanken Electric co.,ltd.
60 V, 85 A, 3.9 mΩ Low RDS(ON) N ch Trench Power MOSFET ( Rev : 2014_01 )
Sanken Electric co.,ltd.
60 V, 85 A, 3.9 mΩ Low RDS(ON) N ch Trench Power MOSFET ( Rev : 2014_05 )
Sanken Electric co.,ltd.
60 V, 69 A, 3.9 mΩ Low RDS(ON) N ch Trench Power MOSFET ( Rev : 2014_01 )
Sanken Electric co.,ltd.
60 V, 69 A, 3.9 mΩ Low RDS(ON) N ch Trench Power MOSFET
Sanken Electric co.,ltd.
40 V, 85 A, 2.6 mΩ Low RDS(ON) N ch Trench Power MOSFET
Sanken Electric co.,ltd.
75 V, 85 A, 5.3 mΩ Low RDS(ON) N ch Trench Power MOSFET
Sanken Electric co.,ltd.
75 V, 85 A, 5.3 mΩ Low RDS(ON) N ch Trench Power MOSFET ( Rev : 2014_01 )
Sanken Electric co.,ltd.
75 V, 85 A, 5.3 mΩ Low RDS(ON) N ch Trench Power MOSFET
Sanken Electric co.,ltd.
75 V, 85 A, 5.3 mΩ Low RDS(ON) N ch Trench Power MOSFET ( Rev : 2014_01 )
Sanken Electric co.,ltd.