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SMBT3946DW1T1G 数据手册 ( 数据表 ) - ON Semiconductor

MBT3946DW1T1G image

零件编号
SMBT3946DW1T1G

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11 Pages

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生产厂家
ONSEMI
ON Semiconductor ONSEMI

The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.


FEATUREs
• hFE, 100−300
• Low VCE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S Prefix for Automotive and Other Applications Requiring Unique
    Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant


零件编号
产品描述 (功能)
PDF
生产厂家
Complementary General Purpose Transistor
ON Semiconductor
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Dual Complementary General Purpose Transistor ( Rev : 2008 )
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Dual Complementary General Purpose Transistor
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Dual Complementary General Purpose Transistor ( Rev : 2014 )
ON Semiconductor
Dual Complementary General Purpose Transistor ( Rev : 2008 )
ON Semiconductor
Dual Complementary General Purpose Transistor
ON Semiconductor
Complementary Dual General Purpose Amplifier Transistor ( Rev : 2010 )
ON Semiconductor
Complementary Dual General Purpose Amplifier Transistor
ON Semiconductor
Complementary Dual General Purpose Amplifier Transistor
ON Semiconductor

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