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Stanford Microdevices
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Product Description
Stanford Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
Product Features
• On-chip Active Bias Control
• Patented High Reliability GaAsHBT Technology
• High Linearity Performance: +48dBm OIP3 Typ.
• Surface-Mountable Plastic Package
APPLICATIONs
• W-CDMA Systems
• Multi-Carrier Applications
• AMPS, ISM Applications
850 MHz, 1 Watt power amplifier with active bias.
Stanford Microdevices
850 MHz 1 Watt Power Amplifier with Active Bias
Sirenza Microdevices => RFMD
850 MHz 1 Watt Power Amplifier with Active Bias
Sirenza Microdevices => RFMD
2150 MHz 1 Watt Power Amplifier with Active Bias
Stanford Microdevices
2150 MHz 1 Watt Power Amplifier with Active Bias
Stanford Microdevices
1960 MHz 1 Watt Power Amplifier with Active Bias
Sirenza Microdevices => RFMD
2150 MHz 1 Watt Power Amplifier with Active Bias
Sirenza Microdevices => RFMD
1960 MHz 1 Watt Power Amp with Active Bias
Stanford Microdevices
1960 MHz 1 Watt Power Amp with Active Bias
Stanford Microdevices
1700-2200 MHz 1 Watt Power Amp with Active Bias
Sirenza Microdevices => RFMD