DESCRIPTION
The SPC4703combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an DFN3X2-8L package. The Trench MOSFET is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. The Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

FEATURES
✦ P-Channel
   -20V/-3.4A,RDS(ON)= 90mΩ@VGS=-4.5V
   -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V
   -20V/-1.7A,RDS(ON)=155mΩ@VGS=-1.8V
✦ Schottky
   VKA (V) = 20V, IF = 1A, VF<0.43V@1.0A
✦ Super high density cell design for extremely low
   RDS (ON)
✦ Exceptional on-resistance and maximum DC
   current capability
✦ DFN3X2-8L package design

APPLICATIONS
● Battery Powered System
● DC/DC Buck Converter
● Load Switch
● Cell Phone