DESCRIPTION
The SPN4436W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .

FEATURES
✦ 60V/8.0A,RDS(ON)= 38mΩ@VGS= 10V
✦ 60V/6.0A,RDS(ON)= 44mΩ@VGS= 4.5V
✦ Super high density cell design for extremely low
   RDS (ON)
✦ Exceptional on-resistance and maximum DC
   current capability
✦ SOP – 8P package design

APPLICATIONS
● DC/DC Converter
● Load Switch