1. Applications
   • DC-DC Converters

2. Features
   (1) N-channel MOSFET and a schottky barrier diode in one package.
   2.1. MOSFET Features
      (1) Low drain-source on-resistance
         : RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V)
      (2) 1.8-V gate drive voltage.
   2.2. Diode Features
      (1) Low forward voltage: VF = 0.51 V (typ.) (@IF = 500 mA)