STB100NF04T4(2016) 数据手册 ( 数据表 ) - STMicroelectronics
零件编号
STB100NF04T4
产品描述 (功能)
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page
20 Pages
File Size
939.5 kB
生产厂家
STMicroelectronics
Description
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
FEATUREs
• AEC-Q101 qualified
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge
APPLICATIONs
• Switching applications
零件编号
产品描述 (功能)
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生产厂家
Automotive-grade N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F3 Power MOSFET in an I²PAK package ( Rev : 2017 )
STMicroelectronics
Automotive-grade N-channel 55 V, 6.2 mΩ typ., 80 A, STripFET™ II Power MOSFETs in D²PAK and TO-220 packages ( Rev : 2019 )
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N-channel 120 V, 0.013 Ω typ., 80 A, STripFET™ II Power MOSFET in a TO-220 package ( Rev : 2014 )
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N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a TO-220 package
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Automotive-grade N-channel 40 V, 1.9 mΩ typ.,120 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages
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N-channel 40 V, 1.8 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a TO-220 package
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N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages
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Automotive-grade N-channel 60 V, 2.3 mΩ typ., 180 A STripFET™ F6 Power MOSFET in a TO-220 package
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Automotive-grade N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET in a TO-220FP package
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Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in a TO-247 package
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