STB10NK60Z-1(2012) 数据手册 ( 数据表 ) - STMicroelectronics
零件编号
STB10NK60Z-1
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24 Pages
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936.1 kB
生产厂家
STMicroelectronics
Description
These devices are N-channel Zener-protected Power MOSFET developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs wellestablished strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
FEATUREs
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Zener-protected
APPLICATIONs
■ Switching applications
零件编号
产品描述 (功能)
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生产厂家
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N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
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N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
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N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247
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