STB25NM60ND(2011) 数据手册 ( 数据表 ) - STMicroelectronics
零件编号
STB25NM60ND
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22 Pages
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STMicroelectronics
Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
■ The worldwide best RDS(on)*area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
APPLICATION
■ Switching applications
零件编号
产品描述 (功能)
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生产厂家
N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
STMicroelectronics
N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
STMicroelectronics
N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 ( Rev : 2008 )
STMicroelectronics
N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 ( Rev : 2013 )
STMicroelectronics
N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247
STMicroelectronics
N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220 and TO-247
STMicroelectronics
N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
STMicroelectronics
N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
STMicroelectronics
N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247
STMicroelectronics
N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 ( Rev : 2012 )
STMicroelectronics
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