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STB5N52K3 数据手册 ( 数据表 ) - STMicroelectronics

STB5N52K3 image

零件编号
STB5N52K3

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23 Pages

File Size
1.2 MB

生产厂家
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.


FEATUREs
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
   characteristics
■ Zener-protected


APPLICATION
   Switching applications


零件编号
产品描述 (功能)
PDF
生产厂家
N-channel 525 V, 1 Ω, 5 A, D²PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET
STMicroelectronics
N-channel 525 V, 1.28 Ω, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh™ Power MOSFET
STMicroelectronics
N-channel 525 V, 0.95 Ω, 6 A, DPAK, TO-220FP, TO-220 SuperFREDmesh3™ Power MOSFET
STMicroelectronics
N-channel 520 V,1.22 Ω,4.4 A,TO-220,IPAK,I2PAK,DPAK,TO-220FP Zener-protected SuperMESH™ Power MOSFET
STMicroelectronics
N-channel 525 V, 0.84 Ω, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET
STMicroelectronics
N-channel 525 V, 0.84 Ω, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET ( Rev : 2008 )
STMicroelectronics
N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 620 V, 1.28 Ω, 4.2 A SuperMESH3™ Power MOSFET D²PAK, DPAK,TO-220FP, TO-220 and IPAK
STMicroelectronics
N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET ( Rev : 2009 )
STMicroelectronics
N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK
STMicroelectronics

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