STD15N60M2-EP(2018) 数据手册 ( 数据表 ) - STMicroelectronics
零件编号
STD15N60M2-EP
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17 Pages
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372.2 kB
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STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters
FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
• Tailored for very high frequency converters (f > 150 kHz)
零件编号
产品描述 (功能)
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生产厂家
N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP Power MOSFET in a TO-220 package ( Rev : 2018 )
STMicroelectronics
N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP Power MOSFET in a TO-220 package
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N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.230 Ω typ., 13 A, MDmesh™ M2 EP Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package ( Rev : 2015 )
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N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package ( Rev : 2016 )
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N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package
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N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFET in a DPAK package
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N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO247‑4 package
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