Description
These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the companys PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing STs proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

FEATUREs
■ 100% avalanche tested
■ Low input capacitances and gate charge
■ Low gate input resistance

APPLICATIONs
■ Switching applications
■ Automotive