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STF42N60M2-EP 数据手册 ( 数据表 ) - STMicroelectronics

STF42N60M2-EP image

零件编号
STF42N60M2-EP

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page
16 Pages

File Size
630.9 kB

生产厂家
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters.


FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected


APPLICATIONs
• Switching applications
• Tailored for very high frequency converters
   (f > 150 kHz)


零件编号
产品描述 (功能)
PDF
生产厂家
N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages
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N-channel 600 V, 0.108 Ω typ., 26 A, MDmesh M2 Power MOSFETs in TO‑220FP, I2PAK, TO-220 and TO-247 packages
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N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package
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