Description
This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

FEATUREs
■ High frequency operation
■ Lower CRES / CIES ratio (no cross-conduction
   susceptibility)
■ Very soft ultra fast recovery antiparallel diode

APPLICATIONs
■ High frequency motor controls, inverters, UPS
■ HF, SMPS and PFC in both hard switch and
   resonant topologies