STH110N10F7-2 数据手册 ( 数据表 ) - STMicroelectronics
零件编号
STH110N10F7-2
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19 Pages
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851.2 kB
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STMicroelectronics
Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
FEATUREs
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
APPLICATIONs
• Switching applications
零件编号
产品描述 (功能)
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生产厂家
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