DESCRIPTION
STM5853 is the P-Channel logic enhancement mode power field effect transistors with Schottky Diode. The MOSFET is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. This device is particularly suited for charging switch for cellular phone and other battery powered circuits

FEATURE
● -20V/-3.4A, RDS(ON) = 77m-ohm(Typ.)
   @VGS = -4.5V
● -20V/-2.4A, RDS(ON) = 98m-ohm
   @VGS = -2.5V
● -20V/-1.7A, RDS(ON) = 135m-ohm
   @VGS = -1.8V
● 20V/1.0A, Vf =0.46V @ 0.5A
● Super high density cell design for
   extremely low RDS(ON)