STP10NM50N 数据手册 ( 数据表 ) - STMicroelectronics
零件编号
STP10NM50N
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PDF
page
18 Pages
File Size
1.1 MB
生产厂家
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATIONs
■ Switching applications
零件编号
产品描述 (功能)
PDF
生产厂家
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