DESCRIPTION
The STP3467 is the P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

FEATURE
◆ -20V/-5.0A, RDS(ON)=90mohm@VGS=-4.5V
◆ -20V/-3.5A, RDS(ON)=110mohm@VGS=-2.5V
◆ -20V/-1.7A, RDS(ON)=140mohm@VGS=-1.8V
◆ Super high density cell design for extremely low
   RDS(ON)
◆ Exceptional an-resistance and maximum DC
   current capability
◆ TSOP-6P package design