DESCRIPTION
The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

FEATURE
● -30V/-5.2A, RDS(ON) = 55m-ohm
   @VGS = -10V
● -30V/-4.2A, RDS(ON) = 75m-ohm
   @VGS = -4.5V
● Super high density cell design for
   extremely low RDS(ON)
● Exceptional on-resistance and maximum
   DC current capability
● TSOP-6P package design