FEATURES
• Multilayer Metal -Silicon Potential Structure.
• Low Leakage Current.
• High Current Capability, High Efficiency.
• High Junction Temperature Capability.
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation.

MECHANICAL CHARACTERISTICS
• Low Voltage High Frequency Switching Power Supply.
• Low Voltage High Frequency Invers Circuit.
• Low Voltage Continued Circuit and Protection Circuit.