DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.14 Ω (@4.5V)
■ TYPICAL RDS(on) = 0.20 Ω (@2.7V)
■ ULTRA LOW THRESHOLD GATE DRIVE (2.7V)
■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY

APPLICATIONS
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
■ CELLULAR