生产厂家
STMicroelectronics
Description
This N-channel Power MOSFET is developed using STMicroelectronics revolutionary MDmesh™ technology, which associates the multiple drain process with the companys PowerMESH™ horizontal layout. This device offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing STs proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market.
FEATUREs
• 100% avalanche tested
• High dv/dt and avalanche capabilities
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package ( Rev : 2020 )
STMicroelectronics
N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 500 V, 0.035 Ω, 68 A, MDmesh™ II Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 600 V, 0.065 Ω typ., 40 A MDmesh™ DM2 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 850 V, 0.2 Ω typ., 19 A MDmesh™ K5 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 650 V, 0.087 Ω typ., 32 A MDmesh™ M2 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in a TO-247 package ( Rev : 2016 )
STMicroelectronics
N-channel 950 V, 0.110 Ω typ., 38 A MDmesh™ K5 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 650 V, 0.058 Ω typ., 48 A MDmesh™ DM2 Power MOSFET in a TO-247 package
STMicroelectronics