生产厂家
STMicroelectronics
Description
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
FEATUREs
• Higher VDS rating
• Higher dv/dt capability
• Excellent switching performance thanks to the
extra driving source pin
• Easy to drive
• 100% avalanche tested
APPLICATIONs
• High efficiency switching applications:
– Servers
– PV inverters
– Telecom infrastructure
– Multi kW battery chargers
N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh™ V Power MOSFET in a TO247-4 package
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N-channel 650 V, 0.073 Ω typ., 30 A MDmesh M5 Power MOSFET in a TO247-4 package
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N-channel 650 V, 0.037 Ω typ., 58 A MDmesh™ V Power MOSFET in TO-3PF and TO-247 packages
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N-channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET in a TO247-4 package
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N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO247‑4 package
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N-channel 600 V, 0.06 Ω typ., 42 A MDmesh™ M2 Power MOSFET in a TO247-4 package ( Rev : 2017 )
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N-channel 30 V, 4 mΩ typ., 80 A Power MOSFET in a DPAK package
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N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a TO-220FP package
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N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package
( Rev : 2022 )
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N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package
STMicroelectronics