STX23NM60ND 数据手册 ( 数据表 ) - STMicroelectronics
零件编号
STX23NM60ND
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STMicroelectronics
Description
The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with a n intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
FEATUREs
■ The worldwide best RDS(on) * area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities
APPLICATION
Switching applications
零件编号
产品描述 (功能)
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生产厂家
N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247
STMicroelectronics
N-channel 600 V, 0.27 Ω, 13 A MDmesh™ II Power MOSFET in TO-220, TO-220FP, TO-247, D²PAK and I²PAK
STMicroelectronics
N-channel 650 V, 0.125 Ω, 22 A, MDmesh™ V Power MOSFET D²PAK, TO-220FP, I²PAK, TO-220, TO-247
STMicroelectronics
N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK MDmesh™ II Power MOSFET
STMicroelectronics
N-channel 500 V, 0.135 Ω, 21 A D²PAK, TO-220, TO-220FP, TO-247 MDmesh™ II Power MOSFET
STMicroelectronics
N-CHANNEL 120V-0.013Ω-80A TO-220/TO-247/TO-220FP/D²PAK STripFET™ II POWER MOSFET
STMicroelectronics
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
STMicroelectronics
N-channel 650 V, 0.095 Ω, 24 A, MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220FP, TO-220, TO-247
STMicroelectronics
N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
STMicroelectronics
N-channel 100 V, 0.009 Ω, 110 A STripFET™ II Power MOSFET in TO-247, TO-220, D²PAK, TO-220FP
STMicroelectronics
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