SWD4N60 数据手册 ( 数据表 ) - Xian Semipower Electronic Technology Co., Ltd.
零件编号
SWD4N60
产品描述 (功能)
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page
7 Pages
File Size
915.3 kB
生产厂家
Xian Semipower Electronic Technology Co., Ltd.
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
FEATUREs
■ High ruggedness
■ RDS(ON) (Max 2.5 Ω)@VGS=10V
■ Gate Charge (Typ 11nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
零件编号
产品描述 (功能)
PDF
生产厂家
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