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T2G6003028-FL 数据手册 ( 数据表 ) - TriQuint Semiconductor

T2G6003028-FL image

零件编号
T2G6003028-FL

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13 Pages

File Size
1,007 kB

生产厂家
TriQuint
TriQuint Semiconductor TriQuint

General Description
The TriQuint T2G6003028-FL is a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Product Features
• Frequency: DC to 6 GHz
• Output Power (P3dB): 25 W at 5.6 GHz
• Linear Gain: >14 dB at 5.6 GHz
• Operating Voltage: 28 V
• Low thermal resistance package


APPLICATIONs
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers


零件编号
产品描述 (功能)
PDF
生产厂家
30W, 28V DC – 6 GHz, GaN RF Power Transistor ( Rev : 2016 )
Qorvo, Inc
30W, 28V, DC – 6 GHz, GaN RF Power Transistor
TriQuint Semiconductor
30W, 28V, DC – 6 GHz, GaN RF Power Transistor
TriQuint Semiconductor
30W, 28V DC – 6 GHz, GaN RF Power Transistor
TriQuint Semiconductor
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Qorvo, Inc
18W, 28V, DC – 6 GHz, GaN RF Power Transistor ( Rev : 2015 )
Qorvo, Inc
10W, 28V DC – 6 GHz, GaN RF Power Transistor
TriQuint Semiconductor
7W, 28V, DC – 6 GHz, GaN RF Power Transistor
TriQuint Semiconductor
18W, 28V, DC – 6 GHz, GaN RF Power Transistor
TriQuint Semiconductor
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Qorvo, Inc

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