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T8719VA 数据手册 ( 数据表 ) - Vishay Semiconductors

T8719VA image

零件编号
T8719VA

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page
4 Pages

File Size
75.6 kB

生产厂家
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
T8719VA is an infrared, 870 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top.


FEATURES
• Package type: chip
• Package form: single chip
• Technology: double hetero
• Dimensions chip (L x W x H in mm): 0.47 x 0.47
   x 0.16
• Peak wavelength:  = 870 nm
• Compliant to RoHS Directive 2002/95/EC and in
   accordance to WEEE 2002/96/EC


零件编号
产品描述 (功能)
PDF
生产厂家
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors
Specification of GaAlAs IR Emitting Diode Chip ( Rev : 2011 )
Vishay Semiconductors
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip ( Rev : 2017 )
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Vishay Semiconductors

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