datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  Transcom, Inc.  >>> TC1101V PDF

TC1101V 数据手册 ( 数据表 ) - Transcom, Inc.

TC1101V image

零件编号
TC1101V

Other PDF
  no available.

PDF
DOWNLOAD     

page
2 Pages

File Size
80.1 kB

生产厂家
TRANSCOM
Transcom, Inc. TRANSCOM

DESCRIPTION
The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.


FEATURES
Via holes for source grounding
Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
High Associated Gain: Ga = 13 dB Typical at 12 GHz
High Dynamic Range: 1 dB Compression Power P-1 = 18.5 dBm at 12 GHz
Breakdown Voltage: BVDGO ≥ 9 V
Lg = 0.25 µm, Wg = 160 µm
All-Gold Metallization for High Reliability
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested

Page Link's: 1  2 

零件编号
产品描述 (功能)
PDF
生产厂家
Low Noise and Medium Power GaAs FETs ( Rev : 2002 )
Transcom, Inc.
Low Noise and Medium Power GaAs FETs
Transcom, Inc.
Low Noise and Medium Power GaAs FETs
Unspecified
Low Noise GaAs FETs
Mimix Broadband
Low-Noise GaAs FETs
Celeritek, Inc.
Low Noise GaAs FETs
Mimix Broadband
Low-Noise GaAs FETs
Unspecified
Low-Noise GaAs FETs ( Rev : 2005 )
Mimix Broadband
Low-Noise GaAs FETs
Celeritek, Inc.
Super Low Noise GaAs FETs ( Rev : 2002 )
Transcom, Inc.

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]