DESCRIPTION
The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with TC1101 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.

FEATURES
• 0.5 dB Typical Noise Figure at 12 GHz
• High Associated Gain: Ga = 12 dB Typical at 12 GHz
• 18.5 dBm Typical Power at 12 GHz
• 13 dB Typical Linear Power Gain at 12 GHz
• Breakdown Voltage : BVDGO ≥ 9V
• Lg = 0.25 µm, Wg = 160 µm
• Tight Vp ranges control
• High RF input power handling capability
• 100 % DC Tested
• Micro-X Metal Ceramic Package