The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.

FEATURES
■ LOW INTERMODULATION DISTORTION
■ HIGH GAIN
    IM3=-45 dBc at Pout= 28.0dBm G1dB=6.0 dB at 10.7 GHz to 11.7 GHz Single Carrier Level
■ BROAD BAND INTERNALLY MATCHED FET
■ HIGH POWER
■ HERMETICALLY SEALED PACKAGE
    P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz