Toshiba - TK12A60U(STA4,Q,M) PDF 数据手册 , TK12A60U(STA4,Q,M) 数据表

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TK12A60U(STA4,Q,M) 数据手册 ( 数据表 ) - Toshiba

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TK12A60U(STA4,Q,M)

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)

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Switching Regulator Applications

• Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.)
• High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
• Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

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SSM3K329R

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2010 )

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SSM6K202FE

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )

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