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TK20N60W5 数据手册 ( 数据表 ) - Toshiba

TK20N60W5 image

零件编号
TK20N60W5

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page
10 Pages

File Size
239.8 kB

生产厂家
Toshiba
Toshiba Toshiba

Features
(1) Fast reverse recovery time: trr = 110 ns (typ.)
(2) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.)
     by used to Super Junction Structure : DTMOS
(3) Easy to control Gate switching
(4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1 mA)


APPLICATIONs
• Switching Voltage Regulators


零件编号
产品描述 (功能)
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生产厂家
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
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MOSFETs Silicon N-Channel MOS (DTMOSIV) ( Rev : 2012 )
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MOSFETs Silicon N-Channel MOS (DTMOSIV)
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MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV) ( Rev : 2012 )
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV) ( Rev : 2012 )
Toshiba

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