• FEATURES
• Low drain-source on-resistance: RDS(ON) = 0.065Ω (typ.)
• Easy to control Gate switching
• Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)
• Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

• APPLICATION
• Switching Voltage Regulators