DESCRIPTION
TSAL7200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a clear, untinted plastic package.

FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Peak wavelength: λp= 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 17°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS
• Infrared remote control unitswith high power requirements
• Free air transmission systems
• Infrared source for optical counters and card readers