Description
TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package.
In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.

FEATUREs
● Extra high radiant power and radiant intensity
● High reliability
● Low forward voltage
● Suitable for high pulse current operation
● Standard T–1 (ø 5 mm) package
● Angle of half intensity ϕ = ± 17°C
● Peak wavelength λp = 940 nm
● Good spectral matching to Si photodetectors

APPLICATIONs
   Infrared remote control units with high power requirements
   Free air transmission systems
   Infrared source for optical counters and card readers
   IR source for smoke detectors