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TSHF6210(2009) 数据手册 ( 数据表 ) - Vishay Semiconductors

TSHF6210 image

零件编号
TSHF6210

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5 Pages

File Size
107 kB

生产厂家
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
TSHF6210 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.


FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Peak wavelength: λp = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 12 MHz
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
   accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition


APPLICATIONS
• Infrared high speed remote control and free air data
   transmission systems with high modulation frequencies or
   high data transmission rate requirements
• Transmission systems according to IrDA requirements and
   for carrier frequency based systems (e.g. ASK/FSK -
   coded, 450 kHz or 1.3 MHz)
• Smoke-automatic fire detectors


零件编号
产品描述 (功能)
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生产厂家
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
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High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
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High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
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High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
Vishay Semiconductors

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