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UL62H256A 数据手册 ( 数据表 ) - Zentrum Mikroelektronik Dresden AG

UL62H256A image

零件编号
UL62H256A

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page
10 Pages

File Size
154.5 kB

生产厂家
ZMD
Zentrum Mikroelektronik Dresden AG ZMD

Description
The UL62H256A is a static RAM manufactured using a CMOS process technology with the following operating modes:
   - Read - Standby
   - Write - Data Retention
The memory array is based on a 6-Transistor cell.


FEATUREs
❐ 32768 x 8 bit static CMOS RAM
❐ 35 and 55 ns Access Time
❐ Common data inputs and data outputs
❐ Three-state outputs
❐ Typ. operating supply current
   35 ns: 45 mA
   55 ns: 30 mA
❐ Standby current < 40 µA at 125 °C
❐ TTL/CMOS-compatible
❐ Power supply voltage 2.5 - 3.6 V
❐ Operating temperature range
   -40 °C to 85 °C
   -40 °C to 125 °C
❐ QS 9000 Quality Standard
❐ ESD protection > 2000 V (MIL STD 883C M3015.7)
❐ Latch-up immunity >100 mA
❐ Package: SOP28 (300/330 mil)

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零件编号
产品描述 (功能)
PDF
生产厂家
Automotive Fast 32K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
Automotive Fast 8K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
Automotive Fast 8K x 8 SRAM
Unspecified
Automotive Fast 8K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
Standard 32K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
32K x 8 SRAM SRAM MEMORY ARRAY
Austin Semiconductor
32K x 8 SRAM SRAM MEMORY ARRAY
Austin Semiconductor
32K x 8 SRAM SRAM MEMORY ARRAY
Austin Semiconductor
Automotive 8K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
Very Low Power/Voltage CMOS SRAM 32K X 8 bit
Brilliance Semiconductor

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